- 您现在的位置：买卖IC网 > PDF目录36713 > APT40M70LVFR (MICROSEMI POWER PRODUCTS GROUP) 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA PDF资料下载
参数资料
| 型号： | APT40M70LVFR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 150K |
| 代理商： | APT40M70LVFR |
050-5850
Rev
A
3-2006
APT40M70B2_LVFR(G)
1
5 10
50 100
400
.01
.1
1
10
50
0
100
200
300
400
500
600
0
0.4
0.8
1.2
1.6
2.0
TC=+25°C
TJ=+150°C
SINGLE PULSE
300
100
50
10
5
1
.5
.1
20
16
12
8
4
0
OPERATIONHERE
LIMITEDBYRDS(ON)
TJ=+150°C
TJ =+25°C
Crss
Coss
Ciss
30,000
10,000
5,000
1,000
500
100
200
100
50
10
5
1
VDS=200V
VDS=80V
VDS=320V
I
D = ID [Cont.]
10S
1mS
10mS
100mS
DC
100S
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11,TYPICALCAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13,TYPICALSOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drain
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAXTM (B2) Package Outline (B2VFR)
TO-264 (L) Package Outline (LVFR)
e1 SAC: Tin, Silver, Copper
相关PDF资料 |
PDF描述 |
|---|---|
| APT40M70JVR | 53 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT40N60LCF | 40 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT40N60B2CFG | 40 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT40N60B2CF | 40 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT40N60LCFG | 40 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT40M70LVFRG | 功能描述:MOSFET N-CH 400V 57A TO-264 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT40M70LVR | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 400V 57A 3-Pin(3+Tab) TO-264 制造商:Microsemi 功能描述:Trans MOSFET N-CH 400V 57A 3-Pin(3+Tab) TO-264 |
| APT40M70LVRG | 制造商:Microsemi Corporation 功能描述: |
| APT40M75JN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT40M80AFN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 400V V(BR)DSS | 58A I(D) |
发布紧急采购，3分钟左右您将得到回复。