- 您现在的位置：买卖IC网 > PDF目录57947 > APT44H60J (MICROSEMI POWER PRODUCTS GROUP) 44 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APT44H60J |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 44 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, ISOTOP-4 |
| 文件页数： | 4/4页 |
| 文件大小： | 273K |
| 代理商： | APT44H60J |
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
SOT-227 (ISOTOP) Package Outline
ISOTOP is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234
5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
0.0506
0.0624
0.118
0.0212
0.180
0.511
Dissipated Power
(Watts)
TJ (°C)
TC (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
E
X
T
1ms
100ms
Rds(on)
Scaling for Different Case & Junction
Temperatures:
I
D = ID(TC = 25°C)
*(T
J - TC)/125
DC line
100s
I
DM
10ms
13s
100s
I
DM
100ms
10ms
13s
Rds(on)
DC line
T
J = 150°C
T
C = 25°C
1ms
T
J = 125°C
T
C = 75°C
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
D = 0.9
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
t1 = Pulse Duration
I D
,DRAIN
CURRENT
(A)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
Figure 10, Maximum Forward Safe Operating Area
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
I D
,DRAIN
CURRENT
(A)
Figure 11, Transient Thermal Impedance Model
1
10
100
800
1
10
100
800
300
100
10
1
0.1
0.25
0.20
0.15
0.10
0.05
0
300
100
10
1
0.1
APT44H60J
050-8147
Rev
A
6-2007
相关PDF资料 |
PDF描述 |
|---|---|
| APT45GP120JDQ2 | 75 A, 1200 V, N-CHANNEL IGBT |
| APT45GP120JDQ2 | 75 A, 1200 V, N-CHANNEL IGBT |
| APT5010B2FLC | 47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5010JFLC | 44 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5010JFLL | 41 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT45-101DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 22.5A I(D) | CHIP |
| APT4510DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 50A I(D) | CHIP |
| APT4510FN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 50A I(D) | F-PACK SIP |
| APT4511AFN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 450V V(BR)DSS | 49A I(D) |
| APT4511DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | CHIP |
发布紧急采购，3分钟左右您将得到回复。