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参数资料
| 型号： | APT5012WVR |
| 厂商： | MICROSEMI CORP |
| 元件分类： | JFETs |
| 英文描述： | 40 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-267AA |
| 封装： | TO-267, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 244K |
| 代理商： | APT5012WVR |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
N-CHANNEL MOSFET
T4-LDS-0181 Rev. 1 (101414)
Page 1 of 6
DEVICES
LEVELS
APT5012WVR
POWER MOS V
500V
40A
0.120
ABSOLUTE MAXIMUM RATINGS (T
C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain – Source Voltage
VDS
500
Vdc
Gate – Source Voltage
VGS
± 30
Vdc
Gate – Source Transient
VGSM
± 40
Vdc
Continuous Drain Current
TC = +25°C
ID
40
Adc
Pulsed Drain Current
TC = +25°C
IDM
160
Adc
Total Power Dissipation
TC = +25°C
Linear Derating Factor
PD
450 (1)
3.6
W
W/°C
Drain to Source On State Resistance
Rds(on)
0.120 (2)
Ω
Operating & Storage Junction Temperature Range
Top, Tstg
-55 to +150
°C
Lead temperature: 0.063” from Case for 10 Se.
TL
300
°C
IAR
40 (1)
Adc
Avalanche Current (3) (Repetitive/ Non-repetitive)
EAR
50 (1)
mJ
EAS
2500 (4)
mJ
Note: (1) Repetitive Rating: Pulse width limited by maximum junction temperature.
(2) Pulse Test: Pulse width < 380S, Duty Cycle < 2%.
(3) MIL-STD-750 Method 3471.
(4) Starting Tj = +25°C, L = 3.13mH, RG = 25, Peak IL = 40A.
ELECTRICAL CHARACTERISTICS (T
A = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250Adc
V(BR)DSS
500
Vdc
Gate-Source Voltage (Threshold)
VDS = VGS = ±30, ID = 2.5mA
VGS(th)
2.0
4.0
Vdc
Gate Current
VGS = ±30V, VDS = 0V
IGSS
±100
nAdc
Drain Current
VGS = 0V, VDS = 500V
VGS = 0V, VDS = 400V, TC = +125°C
IDSS1
IDSS2
25
0.25
Adc
Diode Forward Voltage
VGS = 0V, ID = 31.5A pulsed
VSD
1.3
Vdc
TO-267
D
S
G
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