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参数资料
| 型号： | APT5012WVR |
| 厂商： | MICROSEMI CORP |
| 元件分类： | JFETs |
| 英文描述： | 40 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-267AA |
| 封装： | TO-267, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 244K |
| 代理商： | APT5012WVR |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0181 Rev. 1 (101414)
Page 2 of 6
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
TYP
Max.
Unit
Capacitance:
Ciss
Coss
Crss
pF
Input capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f =1 MHz
7400
1000
380
8900
1400
570
Gate Charge:
Qg(on)
Qgs
Qgd
nC
On-State Gate Charge (3)
Gate to Source Charge
Gate to Drain (“Miller”) Charge
VGS = 10V
VDS = 250V
ID = 40A
312
50
127
470
75
190
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
TYP
Max.
Unit
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = 40A
VGS = 15Vdc
VDD = 250Vdc
RG = 0.6Ω
td(on)
tr
td(off)
tf
14
165
54
5
30
80
10
ns
Continuous Source Current (Body Diode)
IS
40
A
Pulsed Source Current (1) (Body Diode)
ISM
160
A
Diode Forward Voltage (2)
VGS = 0V, IS = -40A
VSD
1.3
V
Reverse Recovery Time
di/dt ≤ 100A/s
IS = -40A
trr
620
ns
Reverse Recovery Charge
di/dt ≤ 100A/s
IS = -40A
Qrr
14.7
uC
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
TYP
Max.
Unit
Junction to Case
RθJC
0.28
°C/W
Junction to Ambient
RθJA
40
°C/W
(1) Repetitive Rating: Pulse width limited by maximum junction temperature.
(2) Pulse Test: Pulse width < 380S, Duty Cycle < 2%
(3) See MIL-STD-750 method 3471
(4) Starting Tj = +25°C, L = 3.13mH, RG = 25, Peak IL = 40A
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