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参数资料
| 型号： | APT5040CNR |
| 元件分类： | JFETs |
| 英文描述： | 13 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 文件页数： | 2/4页 |
| 文件大小： | 52K |
| 代理商： | APT5040CNR |
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Test Conditions
f = 1 MHz
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°C
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°C
R
G
= 1.80
Characteristic
Drain-to-Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
DC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
DYNAMIC CHARACTERISTICS
APT5040CNR
MIN
TYP
MAX
15
22
1430
1800
330
465
130
200
71
105
8.7
12
37
55
14
28
21
42
44
66
15
30
UNIT
pF
nC
ns
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
3
Starting Tj = +25°C, L = 9.47mH, RG = 25, Peak IL = 13A
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2 (V
GS
= 0V, I
S
= -I
D
[Cont.])
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
s)
Reverse Recovery Charge (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
s)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Symbol
RθJC
RθJA
Characteristic
Junction to Case
Junction to Ambient
UNIT
Amps
Volts
ns
C
MIN
TYP
MAX
13
52
1.3
296
592
4.4
8.8
UNIT
W/
°C
MIN
TYP
MAX
0.80
50
THERMAL CHARACTERISTICS
050-5016
Rev
-
Z
θJC
,THERMAL
IMPEDANCE
(
°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT5040DN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | CHIP |
| APT5040KFLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT5040KFLLG | 功能描述:MOSFET N-CH 500V 17A TO-220 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT5050AN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-3 |
| APT5050BN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14A I(D) | TO-247AD |
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