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参数资料
| 型号： | APT50GF60BR |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 82K |
| 代理商： | APT50GF60BR |
052-6207
Rev
E
6-2000
APT50GF60BR
TO-247
G
C
E
APT50GF60BR
600V
75A
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
G
C
E
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
Low Forward Voltage Drop
High Freq. Switching to 20KHz
Low Tail Current
Ultra Low Leakage Current
Avalanche Rated
RBSOA and SCSOA Rated
MIN
TYP
MAX
600
4.5
5.5
6.5
2.1
2.7
2.2
2.8
0.5
5.0
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1.0mA)
Gate Threshold Voltage
(VCE = VGE, IC = 700A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
Symbol
BVCES
VGE(TH)
VCE(ON)
ICES
IGES
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
mA
nA
Symbol
VCES
VCGR
VGE
I C1
I C2
I CM
I LM
EAS
PD
TJ,TSTG
TL
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20KW)
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 90°C
Pulsed Collector Current 1
@ TC = 25°C
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125°C
Single Pulse Avalanche Energy 2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT50GF60BR
600
±20
75
50
160
100
75
300
-55 to 150
300
UNIT
Volts
Amps
mJ
Watts
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GF60HR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF60JCU2 | 制造商:Microsemi Corporation 功能描述:Microsemi APT50GF60JCU2 IGBTs |
| APT50GF60JU2 | 功能描述:IGBT 600V 75A 277W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT50GF60JU3 | 功能描述:IGBT 600V 75A 277W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT50GF60LRD | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
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