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参数资料
| 型号： | APT50GF60BR |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 75 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 82K |
| 代理商： | APT50GF60BR |
052-6207
Rev
E
6-2000
APT50GF60BR
TJ, JUNCTION TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature
Figure 9, Maximum Collector Current vs Case Temperature
TJ, JUNCTION TEMPERATURE (°C)
RG, GATE RESISTANCE (OHMS)
Figure 10, Breakdown Voltage vs Junction Temperature
Figure 11, Typical Switching Energy Losses vs Gate Resistance
TJ, JUNCTION TEMPERATURE (°C)
IC, COLLECTOR CURRENT (AMPERES)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
Figure 13, Typical Switching Energy Losses vs Collector Current
F, FREQUENCY (KHz)
Figure 14, Typical Load Current vs Frequency
IC1
0.5 IC2
IC2
IC1
Eon
Eoff
Eon
Eoff
0.5 IC2
IC2
For Both:
Duty Cycle = 50%
TJ = +125°C
Tsink = +90°C
Gate drive as specified
Power dissapation = 83W
ILOAD = IRMS of fundamental
SWITCHING
LOAD
CURRENT
(A)
TOTAL
SWITCHING
ENERGY
LOSSES
(mJ)
B
V
CES
,COLLECTOR-TO-EMITTER
BREAKDOWN
V
CE
(SAT),
COLLECTOR-TO-EMITTER
VOLTAGE
(NORMALIZED)
SATURATION
VOLTAGE
(VOLTS)
SWITCHING
ENERGY
LOSSES
(mJ)
SWITCHING
ENERGY
LOSSES
(mJ)
I C
,COLLECTOR
CURRENT
(AMPERES)
VCC = 0.66 VCES
VGE= +15V
TJ = +125°C
RG=10W.
VCC = 0.66 VCES
VGE= +15V
RG=10W
-50 -25
0
25
50
75
100 125 150
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
0
20
40
60
80
100
-50 -25
0
25
50
75
100 125 150
0
10
20
30
40
50
0.1
1.0
10
100
1000
80
60
40
20
0
10
8
6
4
2
0
2.5
2.0
1.5
1.0
0.5
0
VCC = 0.66 VCES
VGE= +15V
TJ = +25°C
IC = IC2
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
0.9
0.8
0.7
20
10
5
1
0.5
100
10
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GF60HR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF60JCU2 | 制造商:Microsemi Corporation 功能描述:Microsemi APT50GF60JCU2 IGBTs |
| APT50GF60JU2 | 功能描述:IGBT 600V 75A 277W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT50GF60JU3 | 功能描述:IGBT 600V 75A 277W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT50GF60LRD | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
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