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参数资料
| 型号： | APT50GF120LRG |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 135 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | ROHS COMPLIANT, TO-264, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 524K |
| 代理商： | APT50GF120LRG |
052-6216
Rev
E
5-2006
APT50GF120B2_LR(G)
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 800V
R
G = 1.0
L = 100H
SWITCHING
ENERGY
LOSSES
(mJ)
E
ON2
,TURN
ON
ENERGY
LOSS
(mJ)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(mJ)
E
OFF
,TURN
OFF
ENERGY
LOSS
(mJ)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
R
G = 1.0, L = 100H, VCE = 800V
V
CE = 800V
T
J = 25°C or 125°C
R
G = 1.0
L = 100H
V
GE = 15V
T
J = 25 or 125°C,VGE = 15V
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
0
5
10
15
20
0
25
50
75
100
125
R
G = 1.0, L = 100H, VCE = 800V
35
30
25
20
15
10
5
0
140
120
100
80
60
40
20
0
25
20
15
10
5
0
35
30
25
20
15
10
5
0
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
350
300
250
200
150
100
50
0
120
100
80
60
40
20
0
7
6
5
4
3
2
1
0
25
20
15
10
5
0
VCE = 800V
VGE = +15V
RG = 1.0
T
J = 125°C
T
J = 25°C
VCE = 800V
VGE = +15V
RG = 1.0
T
J = 125°C
T
J = 25°C
VCE = 800V
VGE = +15V
TJ = 125°C
VCE = 800V
VGE = +15V
RG = 1.0
E
on2,100A
E
off,100A
E
on2,50A
E
off,50A
E
on2,25A
E
off,25A
E
on2,100A
E
off,100A
E
on2,50A
E
off,50A
E
on2,25A
E
off,25A
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