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参数资料
| 型号： | APT50GF120LRG |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 135 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | ROHS COMPLIANT, TO-264, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 524K |
| 代理商： | APT50GF120LRG |
052-6216
Rev
E
5-2006
APT50GF120B2_LR(G)
TYPICAL PERFORMANCE CURVES
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
0.3
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5
10-4
10-3
10-2
10-1
1.0
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10
20
30
40
50
60
70
80
F
MAX
,OPERATING
FREQUENCY
(kHz)
I
C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
TJ = 125°C
D = 50 %
VCE = 800V
RG = 1.0
60
10
5
1
0.5
0.1
0.05
F
max
= min (f
max, fmax2)
0.05
f
max1 = t
d(on) + tr + td(off) + tf
P
diss - Pcond
E
on2 + Eoff
f
max2 =
P
diss =
T
J - TC
RθJC
D = 0.9
0.7
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
TC = 75°C
TC = 100°C
6,000
1,000
500
100
160
140
120
100
80
60
40
20
0
C,
CAPACITANCE
(
P
F)
I C
,COLLECTOR
CURRENT
(A)
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
200 400
600
800 1000 1200 1400
C
res
C
ies
C
oes
0.0663
0.0941
0.00740
0.252
Dissipated Power
(Watts)
TJ (°C)
TC (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
E
X
T
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| APT50GF60JU2 | 功能描述:IGBT 600V 75A 277W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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