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参数资料
| 型号： | APT50GF60LRD |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 80 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 112K |
| 代理商： | APT50GF60LRD |
APT50GF60B2RD/LRD
600
±20
80
50
160
100
300
-55 to 150
300
Symbol
VCES
VCGR
VGE
IC1
IC2
ICM
ILM
PD
TJ,TSTG
TL
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20K)
Gate Emitter Voltage
Continuous Collector Current 3 @ TC = 25°C
Continuous Collector Current @ TC = 105°C
Pulsed Collector Current 1
@ TC = 25°C
RBSOA Clamped Inductive Load Current @ RG = 11 TC = 125°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
UNIT
Volts
Amps
Watts
°C
G
C
E
MAXIMUM RATINGS (IGBT)
All Ratings: TC = 25°C unless otherwise specified.
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-
Punch Through Technology the Fast IGBT combined with an APT free-
wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
ruggedness and fast switching speed.
Low Forward Voltage Drop
High Freq. Switching to 20KHz
Low Tail Current
Ultra Low Leakage Current
RBSOA and SCSOA Rated
Ultrafast Soft Recovery Antiparallel Diode
Fast IGBT & FRED
TO-264
(LRD)
G
C
E
T-Max
(B2RD)
G
C
E
APT50GF60B2RD
APT50GF60LRD
600V
80A
APT50GF60B2RD
APT50GF60LRD
MIN
TYP
MAX
4.5
5.5
6.5
2.1
2.7
2.2
2.8
0.75
5.5
±100
Characteristic / Test Conditions
Gate Threshold Voltage
(VCE = VGE, IC = 700A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
Symbol
VGE(TH)
VCE(ON)
ICES
IGES
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
UNIT
Volts
mA
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
052-6253
Rev
B
6-2002
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相关代理商/技术参数 |
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|---|---|
| APT50GL60BN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 50A I(C) | TO-247 |
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| APT50GN120B2G | 功能描述:IGBT 1200V 134A 543W TO-247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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