- 您现在的位置：买卖IC网 > PDF目录64116 > APT50GP60JDQ2 (MICROSEMI POWER PRODUCTS GROUP) 100 A, 600 V, N-CHANNEL IGBT PDF资料下载
参数资料
| 型号： | APT50GP60JDQ2 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT |
| 封装： | ISOTOP-4 |
| 文件页数： | 4/9页 |
| 文件大小： | 445K |
| 代理商： | APT50GP60JDQ2 |
050-7496
Rev
A
11-2005
APT50GP60JDQ2
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 400V
R
G = 4.3
L = 100H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
V
CE = 400V
T
J = 25°C or 125°C
R
G = 4.3
L = 100H
140
120
100
80
60
40
20
0
120
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
500
0
4000
3500
3000
2500
2000
1500
1000
500
0
V
GE = 15V
20 30 40 50 60 70 80 90 100 110
20 30 40 50 60 70
80 90 100 110
20 30 40 50 60 70 80 90 100 110
20 30 40
50 60
70 80 90 100 110
20 30 40 50 60 70 80 90 100 110
0
10
20
30
40
50
0
25
50
75
100
125
R
G = 4.3, L = 100H, VCE = 400V
T
J = 25 or 125°C,VGE = 15V
25
20
15
10
5
0
90
80
70
60
50
40
30
20
10
0
4000
3500
3000
2500
2000
1500
1000
500
0
6000
5000
4000
3000
2000
1000
0
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
R
G = 4.3, L = 100H, VCE = 400V
VCE = 400V
VGE = +15V
RG = 4.3
T
J = 125°C
T
J = 25°C
VCE = 400V
VGE = +15V
RG = 4.3
T
J = 125°C
T
J = 25°C
E
on2,100A
E
off,100A
VCE = 400V
VGE = +15V
TJ = 125°C
E
on2,25A
E
off,25A
E
on2,50A
E
off,50A
E
on2,100A
E
off,100A
E
on2,25A
E
off,25A
E
on2,50A
E
off,50A
VCE = 400V
VGE = +15V
RG = 4.3
相关PDF资料 |
PDF描述 |
|---|---|
| APT50GP60JDQ2 | 100 A, 600 V, N-CHANNEL IGBT |
| APT50GP90B | 100 A, 900 V, N-CHANNEL IGBT, TO-247AD |
| APT60GF60JU2 | 93 A, 600 V, N-CHANNEL IGBT |
| APT75GN120J | 124 A, 1200 V, N-CHANNEL IGBT |
| APT77H60J | 77 A, 600 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GP60LDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GP60LDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 150A TO-264 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GP60S | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT50GP60SG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE - Rail/Tube |
| APT50GR120B2 | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 117A 694W TO247 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。