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参数资料
| 型号： | APT50GP60JDQ2 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 100 A, 600 V, N-CHANNEL IGBT |
| 封装： | ISOTOP-4 |
| 文件页数： | 6/9页 |
| 文件大小： | 445K |
| 代理商： | APT50GP60JDQ2 |
050-7496
Rev
A
11-2005
APT50GP60JDQ2
Figure 22, Turn-on Switching Waveforms and Denitions
Figure 23, Turn-off Switching Waveforms and Denitions
APT30DQ60
IC
A
D.U.T.
VCE
Figure 21, Inductive Switching Test Circuit
VCC
Collector Current
Collector Voltage
Switching Energy
5 %
10%
Gate Voltage
10%
td(on)
5%
tr
90%
T
J = 125 °C
90%
Gate Voltage
Collector Voltage
Collector Current
0
tf
90%
10%
t
d(off)
Switching Energy
T
J = 125 °C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GP60LDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GP60LDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube 制造商:Microsemi Corporation 功能描述:IGBT 600V 150A TO-264 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GP60S | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 IGBT |
| APT50GP60SG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE - Rail/Tube |
| APT50GR120B2 | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 117A 694W TO247 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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