- 您现在的位置：买卖IC网 > PDF目录36718 > APT50GS60BRDQ2(G) (MICROSEMI POWER PRODUCTS GROUP) 93 A, 600 V, N-CHANNEL IGBT, TO-247AD PDF资料下载
参数资料
| 型号： | APT50GS60BRDQ2(G) |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 93 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 2/7页 |
| 文件大小： | 607K |
| 代理商： | APT50GS60BRDQ2(G) |
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
VBR(CES)
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250A
600
-
V
BR(CES)/TJ
Breakdown Voltage Temperature Coeff
Reference to 25°C, I
C = 250A
-
0.60
-
V/°C
VCE(ON)
Collector-Emitter On Voltage 4
VGE = 15V
IC = 50A
TJ = 25°C
-
2.8
3.15
V
TJ = 125°C
-
3.25
-
VEC
Diode Forward Voltage 4
IC = 50A
TJ = 25°C
-
2.15
-
TJ = 125°C
-
1.8
-
VGE(th)
Gate-Emitter Threshold Voltage
VGE = VCE, IC = 1mA
3
4
5
VGE(th)/TJ Threshold Voltage Temp Coeff
-
6.7
-
mV/°C
ICES
Zero Gate Voltage Collector Current
VCE = 600V,
VGE = 0V
TJ = 25°C
-
50
A
TJ = 125°C
-
TBD
IGES
Gate-Emitter Leakage Current
VGE = ±20V
-
±100
nA
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
gfs
Forward Transconductance
VCE = 50V, IC = 50A
-
31
-
S
Cies
Input Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
-
2635
-
pF
Coes
Output Capacitance
-
240
-
Cres
Reverse Transfer Capacitance
-
145
-
Co(cr)
Reverse Transfer Capacitance
Charge Related 5
VGE = 0V
VCE = 0 to 400V
-
115
-
Co(er)
Reverse Transfer Capacitance
Current Related 6
85
Qg
Total Gate Charge
VGE = 0 to 15V
IC = 50A, VCE = 300V
-
235
-
nC
Qge
Gate-Emitter Charge
-
18
-
Ggc
Gate-Collector Charge
-
100
-
td(on)
Turn-On Delay Time
Inductive Switching IGBT and
Diode:
TJ = 25°C, VCC = 400V,
IC = 50A
RG = 4.7 7, VGG = 15V
-
16
-
ns
tr
Rise Time
-
33
-
td(off)
Turn-Off Delay Time
-
225
-
tf
Fall Time
-
37
-
Eon1
Turn-On Switching Energy 8
-
TBD
-
mJ
Eon2
Turn-On Switching Energy 9
-
1.2
-
Eoff
Turn-Off Switching Energy 10
-
0.755
-
td(on)
Turn-On Delay Time
Inductive Switching IGBT and
Diode:
TJ = 125°C, VCC = 400V,
IC = 50A
RG = 4.7 7, VGG = 15V
-
33
-
ns
tr
Rise Time
-
33
-
td(off)
Turn-Off Delay Time
-
250
-
tf
Fall Time
-
23
-
Eon1
Turn-On Switching Energy 8
-
TBD
-
mJ
Eon2
Turn-On Switching Energy 9
-
1.7
-
Eoff
Turn-Off Switching Energy 10
-
0.950
-
trr
Diode Reverse Recovery Time
IF = 50A
VR = 400V
diF/dt = 200A/s
-
25
-
ns
Qrr
Diode Reverse Recovery Charge
-
35
-
nC
Irrm
Peak Reverse Recovery Current
-
3
-
A
Static Characteristics
TJ = 25°C unless otherwise specied
Dynamic Characteristics
TJ = 25°C unless otherwise specied
APT50GS60B_SRDQ2(G)
052-6300
Rev
A
8-2007
相关PDF资料 |
PDF描述 |
|---|---|
| APT50GS60SRDQ2(G) | 93 A, 600 V, N-CHANNEL IGBT |
| APT50GT120B2R | 106 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT50GT120B2RG | 106 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT50GT120B2R | 94 A, 1200 V, N-CHANNEL IGBT, TO-247 |
| APT50GT120LRG | 94 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GS60BRG | 功能描述:IGBT 600V 93A 415W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT50GS60SR | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
| APT50GS60SRDQ2 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT50GS60SRDQ2G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode |
| APT50GS60SRG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
发布紧急采购，3分钟左右您将得到回复。