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参数资料
| 型号： | APT50GT120JRDQ2 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 72 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ISOTOP-4 |
| 文件页数： | 4/9页 |
| 文件大小： | 450K |
| 代理商： | APT50GT120JRDQ2 |
052-6278
Rev
A
9-2005
APT50GT120JRDQ2
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 800V
R
G = 1
L = 100H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
VCE = 800V
VGE = +15V
RG = 1
V
CE = 800V
T
J = 25°C, or 125°C
R
G = 1
L = 100H
35
30
25
20
15
10
5
0
160
140
120
100
80
60
40
20
0
25,000
20,000
15,000
10,000
5,000
0
60,000
50,000
40,000
30,000
20,000
10,000
0
300
250
200
150
100
50
0
60
50
40
30
20
10
0
6000
5000
4000
3000
2000
1000
0
25,000
20,000
15,000
10,000
5,000
0
V
GE = 15V
VCE = 800V
VGE = +15V
RG = 1
VCE = 800V
VGE = +15V
RG = 1
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
10
30
50
70
90
110
0
10
20
30
40
50
0
25
50
75
100
125
R
G = 1, L = 100H, VCE = 800V
T
J = 125°C
T
J = 25°C
T
J = 125°C
T
J = 25°C
R
G = 1, L = 100H, VCE = 800V
T
J = 25 or 125°C,VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
E
on2,100A
E
off,100A
E
on2,50A
E
off,50A
E
on2,25A
E
off,25A
VCE = 800V
VGE = +15V
TJ = 125°C
E
on2,100A
E
off,100A
E
on2,50A
E
off,50A
E
on2,25A
E
off,25A
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| APT50GT120JU2 | 75 A, 1200 V, N-CHANNEL IGBT |
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| APT50GT120JU3 | 75 A, 1200 V, N-CHANNEL IGBT |
| APT50GT120LRDQ2 | 106 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| APT50GT120LRDQ2G | 106 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GT120JU2 | 功能描述:IGBT 1200V 75A 347W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT50GT120JU3 | 功能描述:IGBT 1200V 75A 347W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:Trench + Field Stop IGBT® 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT50GT120LR | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt IGBT |
| APT50GT120LRDQ2G | 功能描述:IGBT 1200V 106A 694W TO264 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT50GT120LRG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt IGBT |
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