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参数资料
| 型号： | APT50GT120LR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 94 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 196K |
| 代理商： | APT50GT120LR |
052-6270
Rev
D
9-2008
Typical Performance Curves
APT50GT120B2R_LR(G)
0
5,000
10,000
15,000
20,000
0
25
50
75
100
125
0
10,000
20,000
30,000
40,000
50,000
60,000
0
10
20
30
40
50
0
1,000
2,000
3,000
4,000
5,000
6,000
10
30
50
70
90
110
0
5,000
10,000
15,000
20,000
10
30
50
70
90
110
0
10
20
30
40
50
60
10
30
50
70
90
110
0
20
40
60
80
100
120
140
160
10
30
50
70
90
110
0
50
100
150
200
250
300
0
20
40
60
80
100
120
0
5
10
15
20
25
30
35
0
20
40
60
80
100
120
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 800V
R
G = 1.0Ω
L = 100μH
V
CE = 800V
V
GE = +15V
R
G = 1.0Ω
V
CE = 800V
T
J = 25°C, or 125°C
R
G = 1.0Ω
L = 100μH
V
GE = 15V
V
CE = 800V
V
GE = +15V
R
G = 1.0Ω
V
CE = 800V
V
GE = +15V
R
G = 1.0Ω
R
G = 1.0Ω, L = 100
μ
H, V
CE = 800V
T
J = 125°C
T
J = 25°C
T
J = 125°C
T
J = 25°C
R
G = 1.0Ω, L = 100
μ
H, V
CE = 800V
T
J = 25 or 125°C,VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
E
on2,100A
E
off,100A
E
on2,50A
E
off,50A
E
on2,25A
E
off,25A
V
CE = 800V
V
GE = +15V
T
J = 125°C
E
on2,100A
E
off,100A
E
on2,50A
E
off,50A
E
on2,25A
E
off,25A
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
t d(ON)
,TURN-ON
DELA
Y
TIME
(ns)
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
t d(OFF)
,TURN-OFF
DELA
Y
TIME
(ns)
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
t r,
RISE
TIME
(ns)
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
t r,
F
ALL
TIME
(ns)
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
E
on2
,
TURN
ON
ENERGY
LOSS
(
μ
J)
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
E
OFF
,
TURN
OFF
ENERGY
LOSS
(
μ
J)
R
G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
SWITCHING
ENERGY
LOSSES
(
μ
J)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
SWITCHING
ENERGY
LOSSES
(
μ
J)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GT120LRDQ2G | 功能描述:IGBT 1200V 106A 694W TO264 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT50GT120LRG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt IGBT |
| APT50GT60BR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60BRDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GT60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube |
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