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参数资料
| 型号： | APT50GT120LR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 94 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 196K |
| 代理商： | APT50GT120LR |
Typical Performance Curves
APT50GT120B2R_LR(G)
052-6270
Rev
D
9-2008
0
20
40
60
80
100
120
10 20 30 40
50 60 70 80 90 100
0
0.05
0. 1
0.15
0. 2
0.25
10-5
10-4
10-3
10-2
10-1
1.0
10
100
1000
5000
0
100
200
300
400
500
600
Z
θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
F
MAX
,OPERA
TING
FREQUENCY
(kHz)
I
C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
T
J = 125°C
T
C = 75°C
D = 50 %
V
CE = 800V
R
G = 1.0Ω
0.5
0.1
0.05
F
max
= min (f
max, f max2)
0.05
f
max1 = t
d(on) + tr + td(off) + tf
P
diss - P cond
E
on2 + E off
f
max2 =
P
diss =
T
J - T C
R θJC
C
oes
C
res
C
ies
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
75°C
100°C
0.0487
0.151
0.00909
0.389
Dissipated Power
(Watts)
T
J (°C)
T
C (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
EXT
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
C,
CAP
ACIT
ANCE
(pF)
0
20
40
60
80
100
120
140
0
200 400
600 800 1000 1200 1400
160
V
CE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
I C
,COLLECT
OR
CURRENT
(A)
相关PDF资料 |
PDF描述 |
|---|---|
| APT50GT120JRDQ2 | 72 A, 1200 V, N-CHANNEL IGBT |
| APT50GT120JRDQ2 | 72 A, 1200 V, N-CHANNEL IGBT |
| APT50GT120JU2 | 75 A, 1200 V, N-CHANNEL IGBT |
| APT50GT120JU3 | 75 A, 1200 V, N-CHANNEL IGBT |
| APT50GT120JU3 | 75 A, 1200 V, N-CHANNEL IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50GT120LRDQ2G | 功能描述:IGBT 1200V 106A 694W TO264 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT50GT120LRG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Thunderbolt IGBT |
| APT50GT60BR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60BRDL | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Resonant Mode Combi IGBT |
| APT50GT60BRDLG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - RESONANT MODE - COMBI - Rail/Tube |
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