- 您现在的位置：买卖IC网 > PDF目录57948 > APT50M38JLL 88 A, 500 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APT50M38JLL |
| 元件分类： | JFETs |
| 英文描述： | 88 A, 500 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 2/5页 |
| 文件大小： | 156K |
| 代理商： | APT50M38JLL |
DYNAMIC CHARACTERISTICS
APT50M38JLL
050-7020
Rev
D
4-2004
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.5
0.1
0.3
0.7
0.9
0.05
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -88A)
Reverse Recovery Time (I
S = -88A, dlS/dt = 100A/s)
Reverse Recovery Charge (I
S = -88A, dlS/dt = 100A/s)
Peak Diode Recovery dv/dt 5
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
88
352
1.3
880
31.0
8
Symbol
R
θJC
R
θJA
MIN
TYP
MAX
0.18
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/dt
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 250V
I
D = 88A @ 25°C
RESISTIVESWITCHING
V
GS = 15V
V
DD = 250V
I
D = 88A @ 25°C
R
G = 0.6
INDUCTIVE SWITCHING @ 25°C
V
DD = 333V, VGS = 15V
I
D = 88A, RG = 5
INDUCTIVE SWITCHING @ 125°C
V
DD = 333V VGS = 15V
I
D = 88A, RG = 5
MIN
TYP
MAX
12000
2540
125
270
70
140
17
22
50
4
1295
940
1875
1165
UNIT
pF
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.93mH, RG = 25, Peak IL = 88A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID88A
di/dt ≤ 700A/s V
R ≤ 500V
T
J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
相关PDF资料 |
PDF描述 |
|---|---|
| APT50M50JLC | 77 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M60JNF | 71 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M60JN | 71 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M75JLLU3 | 51 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M80B2FLC | 58 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50M38JLL_04 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS 7 R MOSFET |
| APT50M50 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT50M50JFLL | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 500V 71A 4-Pin SOT-227 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
| APT50M50JFLL_04 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS 7 R FREDFET |
| APT50M50JLC | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
发布紧急采购，3分钟左右您将得到回复。