参数资料
型号: APT50M38JLL
元件分类: JFETs
英文描述: 88 A, 500 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ISOTOP-4
文件页数: 5/5页
文件大小: 156K
代理商: APT50M38JLL
050-7020
Rev
D
4-2004
Typical Performance Curves
APT50M38JLL
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOPis a Registered Trademark of SGS Thomson.
SOT-227 (ISOTOP) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Figure 19, Turn-on Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
Drain Current
DrainVoltage
GateVoltage
T
J125°C
Switching Energy
5%
10%
t
d(on)
5%
10%
90%
t
r
Switching Energy
Drain Current
DrainVoltage
GateVoltage
T
J125°C
10%
0
t
d(off)
90%
t
f
IC
D.U.T.
APT60DF60
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
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