参数资料
型号: APT50M50JLL
元件分类: JFETs
英文描述: 71 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ISOTOP-4
文件页数: 3/5页
文件大小: 155K
代理商: APT50M50JLL
050-7116
Rev
B
3-2004
APT50M50JLL
Typical Performance Curves
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
7.5V
5V
5.5V
6.5V
6V
7V
15 &10V
VDS> ID (ON) x RDS(ON) MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
DS(ON)
,DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS(TH)
,THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS(ON)
,DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
0
20
40
60 80 100 120 140 160 180
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75 100 125 150
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGEOUTPUTCHARACTERISTICS
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D, DRAIN CURRENT (AMPERES)
FIGURE4,TRANSFERCHARACTERISTICS
FIGURE 5, R
DS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
T
J, JUNCTION TEMPERATURE (°C)
T
C, CASE TEMPERATURE (°C)
FIGURE 8, R
DS(ON) vs. TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
200
180
160
140
120
100
80
60
40
20
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
I
D = 35.5A
V
GS = 10V
180
160
140
120
100
80
60
40
20
0
80
70
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
0.0492
0.142
0.0189
0.0273F
0.469F
44.2F
Power
(Watts)
Junction
temp. ( ”C)
RC MODEL
Case temperature
NORMALIZED TO
V
GS
= 10V @ I
D
= 35.5A
相关PDF资料
PDF描述
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