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参数资料
| 型号： | APT50M50JLL |
| 元件分类： | JFETs |
| 英文描述： | 71 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 5/5页 |
| 文件大小： | 155K |
| 代理商： | APT50M50JLL |
050-7116
Rev
B
3-2004
APT50M50JLL
Typical Performance Curves
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOPis a Registered Trademark of SGS Thomson.
SOT-227 (ISOTOP) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
IC
D.U.T.
APT60DF60
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
10%
t
d(on)
t
r
10%
5%
Switching Energy
5%
Drain Current
DrainVoltage
GateVoltage
T
J125°C
90%
t
d(off)
t
f
10%
0
Drain Current
DrainVoltage
GateVoltage
T
J125°C
Switching Energy
相关PDF资料 |
PDF描述 |
|---|---|
| APT50M50JVFR | 77 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M50JVFR | 77 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M50JVR | 77 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M50JVR | 77 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M50L2FLL | 89 A, 500 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50M50JVFR | 功能描述:MOSFET N-CH 500V 77A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS V® 标准包装:10 系列:* |
| APT50M50JVR | 功能描述:MOSFET N-CH 500V 77A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS V® 标准包装:10 系列:* |
| APT50M50L2FLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT50M50L2FLL_04 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS 7 R FREDFET |
| APT50M50L2FLLG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS7 - Rail/Tube |
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