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参数资料
| 型号： | APT50M60JVFR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 63 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 1/5页 |
| 文件大小： | 169K |
| 代理商： | APT50M60JVFR |
050-7265
Rev
A
5-2004
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 31.5A)
Zero Gate Voltage Drain Current (V
DS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
500
0.060
250
1000
±100
24
APT50M60JVFR
500
63
252
±30
±40
568
4.55
-55 to 150
300
63
50
3200
APT50M60JVFR
500V 63A
0.060
G
D
S
Power MOS V is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
Popular SOT-227 Package
Avalanche Energy Rated
Faster Switching
Lower Leakage
SOT-227
G
S
D
ISOTOP
"UL Recognized"
POWER MOS V FREDFET
FAST RECOVERY BODY DIODE
相关PDF资料 |
PDF描述 |
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| APT50M60JVFR | 63 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| APT50M60L2VFR | 77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M60L2VFR | 77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M60L2VR | 77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50M60JVR | 功能描述:MOSFET N-CH 500V 63A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS V® 标准包装:10 系列:* |
| APT50M60L2VFR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT50M60L2VFR_04 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS V㈢ FREDFET |
| APT50M60L2VFRG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube |
| APT50M60L2VR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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