参数资料
型号: APT50M60JVFR
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 63 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ISOTOP-4
文件页数: 5/5页
文件大小: 169K
代理商: APT50M60JVFR
050-7265
Rev
A
5-2004
Typical Performance Curves
APT50M60JVFR
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
Switching Energy
Drain Current
DrainVoltage
GateVoltage
T
J125°C
10%
0
t
d(off)
90%
t
f
90%
Drain Current
DrainVoltage
GateVoltage
T
J125°C
10%
t
d(on)
90%
5%
t
r
5%
10%
Switching Energy
IC
D.U.T.
APT60DF60
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOPis a Registered Trademark of SGS Thomson.
SOT-227 (ISOTOP) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
相关PDF资料
PDF描述
APT50M60JVFR 63 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
APT50M60L2VFRG 77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
APT50M60L2VFR 77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
APT50M60L2VFR 77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
APT50M60L2VR 77 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
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APT50M60L2VFRG 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube
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