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参数资料
| 型号： | APT50M65B2FLL |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 67 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | B2, TMAX-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 100K |
| 代理商： | APT50M65B2FLL |
DYNAMIC CHARACTERISTICS
APT50M65 B2FLL - LFLL
050-7031
Rev
C
12-2003
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.20
0.16
0.12
0.08
0.04
0
0.5
0.1
0.3
0.7
0.9
0.05
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.34mH, RG = 25, Peak IL = 67A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-67A di/dt ≤ 700A/s V
R ≤
500V
T
J ≤
150
°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.18
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
THERMAL CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -67A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -67A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -67A, di/dt = 100A/s)
Peak Recovery Current
(IS = -67A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/
dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
67
268
1.3
15
Tj = 25°C
270
Tj = 125°C
540
Tj = 25°C
2.6
Tj = 125°C
9.6
Tj = 25°C
17
Tj = 125°C
31
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 250V
I
D
= 67A @ 25°C
RESISTIVE SWITCHING
V
GS
= 15V
V
DD
= 250V
I
D
= 67A @ 25°C
R
G
= 0.6
INDUCTIVE SWITCHING @ 25°C
V
DD
= 333V, V
GS
= 15V
I
D
= 67A, R
G
= 3
INDUCTIVE SWITCHING @ 125°C
V
DD
= 333V V
GS
= 15V
I
D
= 67A, R
G
= 3
MIN
TYP
MAX
7010
1390
87
141
40
70
12
28
29
30
1035
845
1556
1013
UNIT
pF
nC
ns
J
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50M65B2FLL_03 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 R FREDFET |
| APT50M65B2FLLG | 功能描述:MOSFET N-CH 500V 67A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT50M65B2LL | 制造商:Microsemi Corporation 功能描述:MOSFET Transistor, N-Channel, TO-247VAR |
| APT50M65B2LL_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 R MOSFET |
| APT50M65B2LLG | 功能描述:MOSFET N-CH 500V 67A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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