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参数资料
| 型号： | APT50M65B2FLL |
| 元件分类： | JFETs |
| 英文描述： | 67 A, 500 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | B2, TMAX-3 |
| 文件页数： | 3/5页 |
| 文件大小： | 100K |
| 代理商： | APT50M65B2FLL |
050-7031
Rev
C
12-2003
Typical Performance Curves
APT50M65B2FLL - LFLL
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
V
GS
(TH),
THRESHOLD
VOLTAGE
B
V
DSS
,DRAIN-TO-SOURCE
BREAKDOWN
R
DS
(ON),
DRAIN-TO-SOURCE
ON
RESISTANCE
I D
,DRAIN
CURRENT
(AMPERES)
(NORMALIZED)
VOLTAGE
(NORMALIZED)
0
5
10
15
20
25
30
012
3
4567
89
0
10
20
30
40
50
60
70
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125 150
-50
-25
0
25
50
75
100
125 150
-50
-25
0
25
50
75
100
125
150
180
160
140
120
100
80
60
40
20
0
1.4
1.3
1.2
1.1
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
1.2
1.1
1.0
0.9
0.8
0.7
0.6
180
160
140
120
100
80
60
40
20
0
70
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
15 &10V
7V
5.5V
5V
6V
6.5V
8V
VGS=10V
VGS=20V
VDS> ID (ON) x RDS (ON)MAX.
250SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = +125°C
TJ = +25°C
TJ = -55°C
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPERES)
FIGURE4,TRANSFERCHARACTERISTICS
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
C
, CASE TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J
, JUNCTION TEMPERATURE (°C)
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
NORMALIZED TO
V
GS
= 10V @ 33.5A
I
D
= 33.5A
V
GS
= 10V
0.0271
0.0656
0.0860
0.00899F
0.0202F
0.293F
Power
(Watts)
Junction
temp. ( ”C)
RC MODEL
Case temperature
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50M65B2FLL_03 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 R FREDFET |
| APT50M65B2FLLG | 功能描述:MOSFET N-CH 500V 67A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT50M65B2LL | 制造商:Microsemi Corporation 功能描述:MOSFET Transistor, N-Channel, TO-247VAR |
| APT50M65B2LL_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS 7 R MOSFET |
| APT50M65B2LLG | 功能描述:MOSFET N-CH 500V 67A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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