参数资料
型号: APT50M75JLLU2
厂商: MICROSEMI CORP
元件分类: JFETs
英文描述: 51 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, ISOTOP-4
文件页数: 1/8页
文件大小: 492K
代理商: APT50M75JLLU2
APT50M75JLLU2
A
P
T
50M
75J
L
U
2–
R
ev
1
J
une
,2006
www.
microsemi.com
1 – 8
ISOTOP
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
G
S
D
K
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
500
V
Tc = 25°C
51
ID
Continuous Drain Current
Tc = 80°C
39
IDM
Pulsed Drain current
204
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
75
m
PD
Maximum Power Dissipation
Tc = 25°C
290
W
IAR
Avalanche current (repetitive and non repetitive)
51
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
IFAV
Maximum Average Forward Current
Duty cycle=0.5
Tc = 80°C
30
IFRMS
RMS Forward Current (Square wave, 50% duty)
39
A
VDSS = 500V
RDSon = 75m max @ Tj = 25°C
ID = 51A @ Tc = 25°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Power MOS 7 MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Fast intrinsic reverse diode
-
Avalanche energy rated
-
Very rugged
ISOTOP Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Very rugged
Low profile
RoHS Compliant
ISOTOP Boost chopper
MOSFET Power Module
K
D
G
S
相关PDF资料
PDF描述
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