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参数资料
| 型号： | APT50M80B2VFRG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 58 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 96K |
| 代理商： | APT50M80B2VFRG |
050-5912
Rev
B
12-2003
APT50M80B2VFR_LVFR
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drain
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAX(B2) Package Outline
TO-264 (L) Package Outline
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
1
10
100
500
0
10
20
30
40
50
0
100
200
300
400
500
600
700
0.3
0.5
0.7
0.9
1.1
1.3
1.5
232
100
10
1
16
12
8
4
0
30,000
10,000
1,000
100
200
100
10
1
Crss
Coss
Ciss
VDS=250V
VDS=100V
VDS=400V
I
D
= 58A
TJ =+150°C
TJ =+25°C
TC=+25°C
TJ=+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
10mS
1mS
100S
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| APT50M80LVFR | 58 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M80B2VFR | 58 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT50M80LVFR | 58 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT50M80LVFRG | 58 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT5510JFLL | 44 A, 550 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT50M80B2VR | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 500V 58A 3-Pin(3+Tab) T-MAX |
| APT50M80B2VR_03 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS V |
| APT50M80B2VRG | 功能描述:MOSFET N-CH 500V 58A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS V® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT50M80JLC | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
| APT50M80LLC | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
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