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参数资料
| 型号： | APT6010JFLL |
| 元件分类： | JFETs |
| 英文描述： | 47 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 4/5页 |
| 文件大小： | 166K |
| 代理商： | APT6010JFLL |
APT40GP90JDF2
050-7482
Rev
B
8-2004
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
T
J = 125°C,VGE =15V
T
J = 25°C,VGE =15V
VCE = 600V
RG = 5
L = 100 H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
VCE = 600V
VGE = +15V
TJ = 125°C
R
G = 5, L = 100
H, VCE = 600V
R
G = 5, L = 100
H, VCE = 600V
VCE=600V
TJ = 25°C, TJ =125°C
RG = 5
L = 100 H
VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
T
J = 25 or 125°C,VGE = 15V
VCE = 600V
VGE = +15V
RG = 5
VCE = 600V
VGE = +15V
RG = 5
VCE = 600V
VGE = +15V
RG = 5
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0
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125
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
G, GATE RESISTANCE (OHMS)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
120
100
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20
0
140
120
100
80
60
40
20
0
3500
3000
2500
2000
1500
1000
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0
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5000
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1000
0
Eon2, 80A
Eoff, 80A
Eon2, 40A
Eoff, 40A
Eon2, 20A
Eoff, 20A
25
20
15
10
5
0
70
60
50
40
30
20
10
0
6000
5000
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1000
0
8000
7000
6000
5000
4000
3000
2000
1000
0
Eon2,80A
Eoff, 40A
Eon2,40A
Eoff,80A
Eon2,20A
Eoff,20A
相关PDF资料 |
PDF描述 |
|---|---|
| APT6010JFLL | 47 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6010LLL | 54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT6010B2LL | 54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6010B2LLG | 54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6010B2LL | 54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT6010JLL | 功能描述:MOSFET N-CH 600V 47A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
| APT6010LFLL | 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
| APT6010LFLLG | 功能描述:MOSFET N-CH 600V 54A TO-264 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT6010LLL | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT6010LLLG | 功能描述:MOSFET N-CH 600V 54A TO-264 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 7® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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