参数资料
型号: APT6010JFLL
元件分类: JFETs
英文描述: 47 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ISOTOP-4
文件页数: 5/5页
文件大小: 166K
代理商: APT6010JFLL
APT40GP90JDF2
TYPICAL PERFORMANCE CURVES
050-7482
Rev
B
8-2004
0.50
0.40
0.30
0.20
0.10
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.3
0.9
0.7
0.1
0.05
0.5
SINGLE PULSE
RECTANGULARPULSEDURATION(SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5
10-4
10-3
10-2
10-1
1.0
10
7,000
1,000
500
100
50
10
180
160
140
120
100
80
60
40
20
0
C,
CAPACITANCE
( P
F)
I C
,COLLECTOR
CURRENT
(A)
VCE,COLLECTOR-TO-EMITTERVOLTAGE(VOLTS)
VCE,COLLECTORTOEMITTERVOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18, Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
200
400
600
800
1000
Cies
Coes
Cres
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
max
max1
max 2
max1
d(on)
r
d(off )
f
diss
cond
max 2
on2
off
JC
diss
JC
Fmin(f
, f
)
0.05
f
tt
t
PP
f
EE
TT
P
R
θ
=
++
+
=
+
=
10
20
30
40
50
60
F
MAX
,OPERATING
FREQUENCY
(kHz)
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 600V
RG = 5
140
50
10
5
1
0.0966
0.228
0.116
0.00997F
0.0158F
1.96F
Power
(watts)
Junction
temp (
°C)
RC MODEL
Case temperature(
°C)
相关PDF资料
PDF描述
APT6010JFLL 47 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
APT6010LLL 54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
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相关代理商/技术参数
参数描述
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