- 您现在的位置：买卖IC网 > PDF目录57948 > APT6017WVR (MICROSEMI CORP-LAWRENCE) 31.5 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-267AA PDF资料下载
参数资料
| 型号： | APT6017WVR |
| 厂商： | MICROSEMI CORP-LAWRENCE |
| 元件分类： | JFETs |
| 英文描述： | 31.5 A, 600 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-267AA |
| 封装： | TO-267, 3 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 248K |
| 代理商： | APT6017WVR |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0178 Rev. 1 (101231)
Page 2 of 6
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Capacitance:
Ciss
Coss
Crss
pF
Input capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f =1 MHz
9000
1260
480
Gate Charge:
Qg(on)
Qgs
Qgd
nC
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 10V, ID = 31.5A
VDS = 300V
475
70
190
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = 31.5A, VGS = 15Vdc,
Gate drive impedance = 0.6
Ω,
VDD = 300Vdc
td(on)
tr
td(off)
tf
30
26
70
10
ns
Diode Reverse Recovery Time
di/dt ≤ 100A/s, VDD ≤ 30V, IF
= 31.5A
trr
690
ns
Diode Reverse Recovery Charge
di/dt ≤ 100A/s, VDD ≤ 30V,
IF = 31.5A
Qrr
15.9
uC
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Junction to Case
RθJC
0.28
°C/W
Junction to Ambient
RθJA
40
°C/W
相关PDF资料 |
PDF描述 |
|---|---|
| APT6027HVR | 20 A, 600 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA |
| APT6030HJN | 23 A, 600 V, 0.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APT6030SN | 23 A, 600 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6032HLL | 16 A, 600 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA |
| APT6045CVR | 11.4 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT6018JN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT6018LNR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 35A I(D) | TO-264AA |
| APT601R2AN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 7A I(D) | TO-3 |
| APT601R2BN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 8A I(D) | TO-247AD |
| APT601R2CN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6.5A I(D) | TO-254AA |
发布紧急采购，3分钟左右您将得到回复。