- 您现在的位置：买卖IC网 > PDF目录57948 > APT6045CVR 11.4 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA PDF资料下载
参数资料
| 型号： | APT6045CVR |
| 元件分类： | JFETs |
| 英文描述： | 11.4 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封装： | TO-254, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 111K |
| 代理商： | APT6045CVR |
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
On State Drain Current 2 (V
DS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (V
GS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (V
DS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (V
GS = ±30V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 1.0mA)
050-5831
Rev
B
10-2004
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Amps
Ohms
A
nA
Volts
MIN
TYP
MAX
600
11.4
0.50
25
250
±100
24
APT6045CVR
600
11.4
45.6
±30
±40
150
1.2
-55 to 150
300
11.4
30
960
APT6045CVR
600V 11.4A
0.50
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
TO-254
Power MOS V is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
Faster Switching
100% Avalanche Tested
Lower Leakage
Popular TO-254 Package
POWER MOS V
TO-254
相关PDF资料 |
PDF描述 |
|---|---|
| APT60GF60JU3 | 93 A, 600 V, N-CHANNEL IGBT |
| APT60GF60JU3 | 93 A, 600 V, N-CHANNEL IGBT |
| APT60M80L2VR | 65 A, 600 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT60M80L2VRG | 65 A, 600 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT60M80L2VR | 65 A, 600 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT6045HN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 15.5A I(D) | TO-258ISO |
| APT6045SVFR | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS V? FREDFET |
| APT6045SVFRG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS V? FREDFET |
| APT6045SVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6060AN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11.5A I(D) | TO-3 |
发布紧急采购，3分钟左右您将得到回复。