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参数资料
| 型号： | APT6045CVR |
| 元件分类： | JFETs |
| 英文描述： | 11.4 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封装： | TO-254, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 111K |
| 代理商： | APT6045CVR |
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C,
CAPACITANCE
(pF)
APT6045CVR
050-5831
Rev
B
10-2004
1
5
10
50 100
600
.01
.1
1
10
50
0
50
100
150
200
250
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TC =+25°C
TJ =+150°C
SINGLE PULSE
46
10
5
1
20
16
12
8
4
0
OPERATION HERE
LIMITED BY RDS (ON)
TJ =+150°C
TJ =+25°C
Crss
Coss
Ciss
10,000
5,000
1,000
500
100
50
10
5
1
.5
.1
VDS=120V
VDS=480V
I
D = ID [Cont.]
100S
10mS
1mS
VDS=300V
TO-254 Package Outline
3.81 (.150) BSC
1.14 (.045)
.89 (.035)
Dia. Typ.
3 Leads
13.84 (.545)
13.59 (.535)
31.37 (1.235)
30.35 (1.195)
13.84 (.545)
13.59 (.535)
3.78 (.149)
3.53 (.139)
1.27 (.050)
1.02 (.040)
6.60 (.260)
6.32 (.249)
3.81 (.150) BSC
6.91 (.272)
6.81 (.268)
Drain
Source
Gate
Dia.
20.32 (.800)
20.06 (.790)
17.40 (.685)
16.89 (.665)
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT6045HN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 15.5A I(D) | TO-258ISO |
| APT6045SVFR | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS V? FREDFET |
| APT6045SVFRG | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:POWER MOS V? FREDFET |
| APT6045SVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT6060AN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11.5A I(D) | TO-3 |
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