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参数资料
| 型号： | APT6040SVFR |
| 元件分类： | JFETs |
| 英文描述： | 16 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | D3PAK-3 |
| 文件页数： | 2/4页 |
| 文件大小： | 150K |
| 代理商： | APT6040SVFR |
050-7270
Rev
B
3-2006
DYNAMIC CHARACTERISTICS
APT6040B_SVFR(G)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -16A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -16A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -16A, di/dt = 100A/s)
Peak Recovery Current
(IS = -16A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
16
64
1.3
15
Tj = 25°C
250
Tj = 125°C
500
Tj = 25°C
1.9
Tj = 125°C
6
Tj = 25°C
15
Tj = 125°C
26
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.50
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 7.50mH, RG = 25, Peak IL = 16A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID16A
di/dt ≤ 700A/s V
R ≤600V
T
J ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 300V
I
D = 16A @ 25°C
V
GS = 15V
V
DD = 300V
I
D = 16A @ 25°C
R
G = 1.6
MIN
TYP
MAX
2600
3120
305
425
125
180
115
170
15
25
52
75
10
20
918
38
50
612
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
相关PDF资料 |
PDF描述 |
|---|---|
| APT6040BVFR | 16 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT6040BVFR | 16 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT6040SVFRG | 16 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT6040BVFRG | 16 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| APT6040SVR | 16 A, 600 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT6040SVFRG | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:POWER MOS V FREDFET |
| APT6040SVR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 16A I(D) | D3PAK |
| APT6045AN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 14.5A I(D) | TO-3 |
| APT6045BN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT6045BNR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 19A I(D) | TO-247 |
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