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参数资料
型号： APT60GF60JRDQ3
厂商： MICROSEMI POWER PRODUCTS GROUP
元件分类： IGBT 晶体管
英文描述： 149 A, 1200 V, N-CHANNEL IGBT
封装： ROHS COMPLIANT, ISOTOP-4
文件页数： 2/9页
文件大小： 446K
代理商： APT60GF60JRDQ3
052-6287
Rev
A
4-2006
APT60GF120JRDQ3
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Test Conditions
Capacitance
V
GE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
V
GE = 15V
V
CE = 600V
I
C = 100A
T
J = 150°C, RG = 1.0, VGE =
15V, L = 100H,V
CE = 1200V
Inductive Switching (25°C)
V
CC = 800V
V
GE = 15V
I
C = 100A
R
G = 1.0
T
J = +25°C
Inductive Switching (125°C)
V
CC = 800V
V
GE = 15V
I
C = 100A
R
G = 1.0
T
J = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (With Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (With Diode) 55
Turn-off Switching Energy 6
MIN
TYP
MAX
7080
785
435
10.0
685
80
420
300
44
100
460
38
14.6
16.4
6.5
44
100
540
125
14.6
21.4
9.2
UNIT
pF
V
nC
A
ns
mJ
ns
mJ
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and diode leakages
3 See MIL-STD-750 Method 3471.
4 E
on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in gure 21, but with a Silicon Carbide diode.
5 E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specications and information contained herein.
THERMAL AND MECHANICAL CHARACTERISTICS
UNIT
°C/W
Volts
oz
gm
Ibin
Nm
MIN
TYP
MAX
0.20
N/A
2500
1.03
29.2
10
1.1
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
Package Weight
Maximum Terminal & Mounting Torque
Symbol
RθJC
V
Isolation
W
T
Torque
相关PDF资料
PDF描述
APT60GF60JU3 93 A, 600 V, N-CHANNEL IGBT
APT65GP60JDF2 130 A, 600 V, N-CHANNEL IGBT
APT75GN120B2G 200 A, 1200 V, N-CHANNEL IGBT
APT75GN120B2 200 A, 1200 V, N-CHANNEL IGBT
APT75GN120L 200 A, 1200 V, N-CHANNEL IGBT, TO-264AA
相关代理商/技术参数
参数描述
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APT60GL120JU3 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:ISOTOP Buck chopper Trench + Field Stop IGBT4 Power module
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