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参数资料
| 型号： | APT60GF60JRDQ3 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 149 A, 1200 V, N-CHANNEL IGBT |
| 封装： | ROHS COMPLIANT, ISOTOP-4 |
| 文件页数： | 4/9页 |
| 文件大小： | 446K |
| 代理商： | APT60GF60JRDQ3 |
052-6287
Rev
A
4-2006
APT60GF120JRDQ3
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 800V
R
G = 1.0
L = 100H
SWITCHING
ENERGY
LOSSES
(mJ)
E
ON2
,TURN
ON
ENERGY
LOSS
(mJ)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(mJ)
E
OFF
,TURN
OFF
ENERGY
LOSS
(mJ)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
R
G = 1.0, L = 100H, VCE = 800V
V
CE = 800V
T
J = 25°C or 125°C
R
G = 1.0
L = 100H
V
GE = 15V
T
J = 25 or 125°C,VGE = 15V
20
40
60
80
100 120
140
160
20
40
60
80
100 120
140
160
20
40
60
80
100 120
140
160
20
40
60
80
100 120
140
160
20
40
60
80
100 120
140 160
20
40
60
80
100
120 140
160
0
5
10
15
20
0
25
50
75
100
125
R
G = 1.0, L = 100H, VCE = 800V
60
50
40
30
20
10
0
200
180
160
140
120
100
80
60
40
20
0
50
40
30
20
10
0
70
60
50
40
30
20
10
0
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
600
500
400
300
200
100
0
140
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
45
40
35
30
25
20
15
10
5
0
VCE = 800V
VGE = +15V
RG = 1.0
T
J = 125°C
T
J = 25°C
VCE = 800V
VGE = +15V
RG = 1.0
T
J = 125°C
T
J = 25°C
E
on2,200A
E
off,200A
E
on2,100A
E
off,100A
E
on2,50A
E
off,50A
VCE = 800V
VGE = +15V
TJ = 125°C
VCE = 800V
VGE = +15V
RG = 1.0
E
on2,200A
E
off,200A
E
on2,100A
E
off,100A
E
on2,50A
E
off,50A
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相关代理商/技术参数 |
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| APT60GF60JU2 | 功能描述:IGBT 600V 93A 378W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
| APT60GF60JU3 | 功能描述:IGBT 600V 93A 378W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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