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参数资料
| 型号： | APT60GT60JRDQ3 |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Thunderbolt IGBT |
| 中文描述： | IGBT的霹雳 |
| 文件页数： | 3/9页 |
| 文件大小： | 462K |
| 代理商： | APT60GT60JRDQ3 |
0
APT60GT60JRDQ3
TYPICAL PERFORMANCE CURVES
180
V
GE
= 15V
V
G
,
V
C
,
I
C
,
I
C
,
(
I
C
D
V
C
,
V
G
,
I
C
,
V
CE
= 480V
V
CE
= 300V
V
CE
= 120V
I
C
= 60A
T
J
= 25°C
250μs PULSE
TEST<0.5 % DUTY
CYCLE
160
140
120
100
80
60
40
20
0
180
160
140
120
100
80
60
40
20
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
300
250
200
150
100
50
0
16
14
12
10
8
6
4
2
0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
140
120
100
80
60
40
20
0
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE
= 15V)
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T
J
= 125°C)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
GATE CHARGE (nC)
FIGURE 4, Gate Charge
V
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
T
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
T
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
T
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
T
C
= 125
°
C
9V
8V
7V
T
J
= 125°C
T
J
= 25°C
T
J
= -55°C
I
C
= 120A
I
C
= 60A
I
C
= 30A
V
= 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0
5
10
15
20
25
30
0
2
4
6
8
10
12
0
50
100
150
200
250
300
6
8
10
12
14
16
0
25
50
75
100
125
150
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75 100 125 150
T
C
= 25°C
6V
10V
11V
13V
15V
T
C
= -55°C
T
J
= 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
I
C
= 120A
I
C
= 60A
I
C
= 30A
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