参数资料
型号: APT60GT60JRDQ3
厂商: Advanced Power Technology Ltd.
英文描述: Thunderbolt IGBT
中文描述: IGBT的霹雳
文件页数: 7/9页
文件大小: 462K
代理商: APT60GT60JRDQ3
0
APT60GT60JRDQ3
TYPICAL PERFORMANCE CURVES
Characteristic / Test Conditions
Maximum Average Forward Current (T
C
= 92°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3ms)
Symbol
I
F
(AV)
I
F
(RMS)
I
FSM
Symbol
V
F
Characteristic / Test Conditions
I
F
= 60A
I
F
= 120A
I
F
= 60A, T
J
= 125°C
Forward Voltage
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Amps
UNIT
Volts
MIN
TYP
MAX
1.8
2.2
1.9
APT60GT60JRDQ3
60
79
600
DYNAMIC CHARACTERISTICS
Characteristic
Symbol
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MIN
TYP
MAX
-
160
-
70
-
100
-
4
-
-
140
-
690
-
9
-
-
80
-
1540
-
31
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Test Conditions
I
F
= 60A, di
F
/dt = -200A/
μ
s
V
R
= 800V, T
C
= 25
°
C
I
F
= 60A, di
F
/dt = -200A/
μ
s
V
R
= 800V, T
C
= 125
°
C
I
F
= 60A, di
F
/dt = -1000A/
μ
s
V
R
= 800V, T
C
= 125
°
C
I
F
= 1A, di
F
/dt = -100A/
μ
s, V
R
= 30V, T
J
= 25
°
C
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
Z
θ
J
,
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.5
SINGLE PULSE
0.1
0.05
0.3
0.7
D = 0.9
Peak T
J
= P
DM
x Z
θ
JC + TC
Duty Factor D =
t1
/
t2
t2
t1
P
D
Note:
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
0.159
0.255
0.186
0.0056
0.0850
0.490
Dissipated Power
(Watts)
T
J
(°C)
T
C
(°C)
Z
are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
E
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