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参数资料
| 型号： | APT60GU30S |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | POWER MOS 7 IGBT |
| 中文描述： | IGBT的功率MOS 7 |
| 文件页数： | 3/6页 |
| 文件大小： | 175K |
| 代理商： | APT60GU30S |
0
APT60GU30B_S
TYPICAL PERFORMANCE CURVES
60
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(V
GE
= 15V)
200
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (V
GE
= 10V)
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
GATE CHARGE (nC)
FIGURE 4, Gate Charge
V
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.2
T
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
T
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
T
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
B
C
,
V
C
,
I
C
,
I
C
,
V
I
C
D
V
C
,
V
G
,
I
C
,
0
0.5
1
1.5
2
0
0.5
1
1.5
2
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
5
6
7
8
9
10 11 12 13 14 15 16
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
150
250μsTJ = 25°C.
<0.5 % DUTY CYCLE
T
C
=-55°C
T
C
=125°C
T
C
=25°C
V
CE
= 240V
V
CE
= 150V
V
CE
= 60V
250 VGE = 10V.
<0.5 % DUTY CYCLE
50
250 VGE = 15V.
<0.5 % DUTY CYCLE
50
250 VGE = 15V.
<0.5 % DUTY CYCLE
0
I
C
= 30A
T
J
= 25°C
TJ = 25°C
TJ = -55°C
TJ = 125°C
T
C
=-55°C
T
C
=25°C
T
C
=125°C
<0.5 % DUTY CYCLE
180
I
C
=
15A
I
C
=
30A
I
C
=
60A
I
C=
60A
I
C=
30A
I
C=
15A
40
30
20
10
0
160
140
120
100
80
60
40
20
0
4
3.5
3
2.5
2
1.5
1
0.5
0
1.15
1.10
1.05
1.0
0.95
0.9
0.85
0.8
60
40
30
20
10
0
14
12
10
8
6
4
2
0
2
1.5
1.0
0.5
160
140
120
100
80
60
40
20
0
Lead Temperature
Limited
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