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参数资料
| 型号： | APT60GU30S |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | POWER MOS 7 IGBT |
| 中文描述： | IGBT的功率MOS 7 |
| 文件页数： | 4/6页 |
| 文件大小： | 175K |
| 代理商： | APT60GU30S |
0
APT60GU30B_S
T
J
=
125°C, V
GE
=
10V
or 15V
T
J
=
25°C, V
GE
=
10V
or 15V
V
CE
= 200V
R
= 20
L = 100 μH
V
GE
=
15V,T
J
=125°C
V
GE
= 15V
V
GE
=
15V,T
J
=25°C
T
J
=
25°C, V
GE
=
10V
or 15V
20
30
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
60
R
G
=
20
, L
=
100
μ
H, V
CE
=
200V
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
180
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
I
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
R
, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
T
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
T
J
=
25 or 125°C,V
GE
=
15V
S
E
O
,
t
r
R
t
d
,
E
O
,
t
f
F
t
d
(
,
T
J
=125°C, V
GE
=15V
T
J
=
125°C, V
GE
=
10V
or 15V
T
J
= 25°C, V
GE
=15V
V
CE
= 200V
T
J
J
=125°C
R
= 20
L = 100 μH
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
20
30
40
50
60
70
10
40
50
60
70
5
10
15
20
25
30
35
40
45
50
0
25
50
75
100
125
60
50
40
30
20
10
0
50
40
30
20
10
0
600
500
400
300
200
100
0
1400
1200
1000
800
600
400
200
0
R
G
=
20
, L
=
100
μ
H, V
CE
=
200V
300
250
200
150
100
50
0
160
140
120
100
80
60
40
20
0
1200
1000
800
600
400
200
0
1200
1000
800
600
400
200
0
V
= 200V
L = 100 μH
R
G
= 20
V
CE
= 200V
L = 100 μH
R
G
= 20
V
CE
= 200V
V
GE
= +15V
T
J
= 125°C
E
on2
15A
E
off
30A
E
on2
30A
E
on2
60A
E
off
60A
E
off
15A
V
CE
= 200V
V
GE
= +15V
R
G
= 20
E
on2
15A
E
off
30A
E
on2
30A
E
on2
60A
E
off
60A
E
off
15A
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