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参数资料
| 型号： | APT75GN60LDQ3 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 155 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 4/9页 |
| 文件大小： | 433K |
| 代理商： | APT75GN60LDQ3 |
050-7620
Rev
B
10-2005
APT75GN60LDQ3(G)
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 400V
R
G = 1.0
L = 100H
SWITCHING
ENERGY
LOSSES
(mJ)
E
ON2
,TURN
ON
ENERGY
LOSS
(mJ)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(mJ)
E
OFF
,TURN
OFF
ENERGY
LOSS
(mJ)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
VCE = 400V
VGE = +15V
RG = 1.0
R
G = 1.0, L = 100H, VCE = 400V
V
CE = 400V
T
J = 25°C, or =125°C
R
G = 1.0
L = 100 H
60
50
40
30
20
10
0
200
180
160
140
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
40
35
30
25
20
15
10
5
0
600
500
400
300
200
100
0
90
80
70
60
50
40
30
20
10
0
6
5
4
3
2
1
0
16
14
12
10
8
6
4
2
0
V
GE = 15V
T
J = 125°C, VGE = 15V
T
J = 25 or 125°C,VGE = 15V
T
J = 25°C, VGE = 15V
T
J = 125°C
T
J = 25°C
VCE = 400V
VGE = +15V
RG = 1.0
T
J = 125°C
T
J = 25°C
VCE = 400V
VGE = +15V
RG = 1.0
VCE = 400V
VGE = +15V
TJ = 125°C
5
25
45
65
85
105 125 145 165
5
25
45
65
85 105 125 145 165
5
25
45
65
85 105 125 145 165
5
25
45
65
85 105 125 145 165
5
25
45
65
85 105 125 145 165
5
25
45
65
85 105 125 145 165
0
10
20
30
40
50
0
25
50
75
100
125
R
G = 1.0, L = 100H, VCE = 400V
E
on2,150A
E
off,150A
E
on2,75A
E
off,75A
E
on2,37.5A
E
off,37.5A
E
on2,150A
E
off,150A
E
on2,75A
E
off,75A
E
on2,37.5A
E
off,37.5A
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| APT75GP120B2G | 功能描述:IGBT 1200V 100A 1042W TMAX RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:POWER MOS 7® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT75GP120J | 制造商:Microsemi Corporation 功能描述:Trans IGBT Chip N-CH 1.2KV 128A 4-Pin SOT-227 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE - Rail/Tube 制造商:Microsemi 功能描述:Microsemi APT75GP120J IGBTs 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR 制造商:Microsemi 功能描述:Trans IGBT Chip N-CH 1.2KV 128A 4-Pin SOT-227 |
| APT75GP120JDQ3 | 功能描述:IGBT 1200V 128A 543W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:POWER MOS 7® 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B |
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