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参数资料
| 型号： | APT8011JFLL |
| 厂商： | MICROSEMI CORP |
| 元件分类： | JFETs |
| 英文描述： | 51 A, 800 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 2/5页 |
| 文件大小： | 272K |
| 代理商： | APT8011JFLL |
050-7094
Rev
B
5-2006
DYNAMIC CHARACTERISTICS
APT8011JFLL
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -51A)
Peak Diode Recovery dv/dt 5
Reverse Recovery Time
(IS = -51A, di/dt = 100A/s)
Reverse Recovery Charge
(IS = -51A, di/dt = 100A/s)
Peak Recovery Current
(IS = -51A, di/dt = 100A/s)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
C
Amps
MIN
TYP
MAX
51
204
1.3
18
Tj = 25°C
375
Tj = 125°C
1200
Tj = 25°C
2.5
Tj = 125°C
18
Tj = 25°C
16
Tj = 125°C
36
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.18
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 2.77mH, RG = 25, Peak IL = 51A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID51A
di/dt ≤ 700A/s V
R ≤ 800
T
J ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 400V
I
D = 51A @ 25°C
RESISTIVESWITCHING
V
GS = 15V
V
DD = 400V
I
D = 51A @ 25°C
R
G = 0.6
INDUCTIVE SWITCHING @ 25°C
V
DD = 533V, VGS = 15V
I
D = 51A, RG = 5
INDUCTIVE SWITCHING @ 125°C
V
DD = 533V VGS = 15V
I
D = 51A, RG = 5
MIN
TYP
MAX
9480
1890
340
650
100
525
23
83
19
1390
1545
2095
1800
UNIT
pF
nC
ns
J
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.20
0.16
0.12
0.08
0.04
0
0.5
0.1
0.3
0.7
0.9
0.05
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相关代理商/技术参数 |
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|---|---|
| APT8011JLL | 功能描述:MOSFET N-CH 800V 51A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
| APT8011JLL_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
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| APT8014JLL | 功能描述:MOSFET N-CH 800V 42A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
| APT8014JLL_03 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
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