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参数资料
| 型号： | APT8011JFLL |
| 厂商： | MICROSEMI CORP |
| 元件分类： | JFETs |
| 英文描述： | 51 A, 800 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ISOTOP-4 |
| 文件页数： | 4/5页 |
| 文件大小： | 272K |
| 代理商： | APT8011JFLL |
050-7094
Rev
B
5-2006
APT8011JFLL
Crss
Ciss
Coss
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
Qg,TOTALGATECHARGE(nC)
V
SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
800
0
10
20
30
40
50
0
100 200 300 400 500 600 700 800
0.3
0.5
0.7
0.9
1.1
1.3
1.5
204
100
50
10
5
1
16
12
8
4
0
TC=+25°C
TJ=+150°C
SINGLE PULSE
10mS
1mS
100S
TJ=+150°C
TJ=+25°C
VDS=400V
VDS=160V
VDS=640V
I
D
= 51A
30,000
10,000
1,000
100
200
100
10
1
OPERATIONHERE
LIMITEDBYRDS(ON)
I
D (A)
I
D (A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 533V
R
G
= 5
T
J
= 125°C
L = 100H
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t rand
t
f
(ns)
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
0
5
10 15 20 25 30 35 40 45 50
V
DD
= 533V
I
D
= 51A
T
J
= 125°C
L = 100H
E
ON includes
diode reverse recovery.
td(on)
td(off)
Eon
Eoff
350
300
250
200
150
100
50
0
4000
3500
3000
2500
2000
1500
1000
500
0
V
DD = 533V
R
G = 5
T
J = 125°C
L = 100H
V
DD = 533V
R
G = 5
T
J = 125°C
L = 100H
E
ON includes
diode reverse recovery.
120
100
80
60
40
20
0
14,000
12,000
10,000
8,000
6,000
4,000
2,000
0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT8011JLL | 功能描述:MOSFET N-CH 800V 51A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
| APT8011JLL_04 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT8014JFLL | 功能描述:MOSFET N-CH 800V 42A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
| APT8014JLL | 功能描述:MOSFET N-CH 800V 42A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS 7® 标准包装:10 系列:* |
| APT8014JLL_03 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
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