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参数资料
| 型号： | APT8014L2LLG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 52 A, 800 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封装： | TO-264MAX, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 87K |
| 代理商： | APT8014L2LLG |
APT8014L2LL
050-7103
Rev
A
12-2003
Crss
Ciss
Coss
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
,GATE-TO-SOURCE
VOLTAGE
(VOLTS)
I D
,DRAIN
CURRENT
(AMPERES)
I DR
,REVERSE
DRAIN
CURRENT
(AMPERES)
C
,CAPACITANCE
(pF)
1
10
100
800
0
10
20
30
40
50
0
50
100
150
200
250
300
350 400
0.3
0.5
0.7
0.9
1.1
1.3
1.5
208
100
50
10
5
1
16
12
8
4
0
TC=+25°C
TJ =+150°C
SINGLE PULSE
10mS
1mS
100S
TJ=+150°C
TJ =+25°C
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 533V
R
G
= 3
T
J
= 125°C
L = 100H
Eon
Eoff
tr
tf
SWITCHING
ENERGY
(
J)
t d(on)
and
t
d(off)
(ns)
SWITCHING
ENERGY
(
J)
t r
and
t
f
(ns)
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35 40
45
50
V
DD
= 533V
I
D
= 52A
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
VDS=400V
VDS=160V
VDS=640V
I
D
= 52A
td(on)
td(off)
Eon
Eoff
160
140
120
100
80
60
40
20
0
3000
2500
2000
1500
1000
500
0
V
DD
= 533V
R
G
= 3
T
J
= 125°C
L = 100H
V
DD
= 533V
R
G
= 3
T
J
= 125°C
L = 100H
E
ON
includes
diode reverse recovery.
20,000
10,000
1,000
100
200
100
10
1
OPERATIONHERE
LIMITEDBYRDS(ON)
140
120
100
80
60
40
20
0
12000
10000
8000
6000
4000
2000
0
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