- 您现在的位置：买卖IC网 > PDF目录36726 > APT8014L2LLG (MICROSEMI POWER PRODUCTS GROUP) 52 A, 800 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA PDF资料下载
参数资料
| 型号： | APT8014L2LLG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 52 A, 800 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封装： | TO-264MAX, 3 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 87K |
| 代理商： | APT8014L2LLG |
050-7103
Rev
A
12-2003
APT8014L2LL
Typical Performance Curves
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
TO-264 MAXTM(L2) Package Outline
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
IC
D.U.T.
APT30DF60
VCE
Figure 20, Inductive Switching Test Circuit
VDD
G
T
J
= 125 C
Drain Current
Drain Voltage
Gate Voltage
90%
0
10%
90%
t
d(off)
t
f
Switching Energy
10 %
t
d(on)
90%
10 %
5 %
T
J
= 125 C
t
r
Switching Energy
5 %
相关PDF资料 |
PDF描述 |
|---|---|
| APT8015JVR | 44 A, 800 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT8015JVR | 44 A, 800 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT8018L2VRG | 43 A, 800 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT8018L2VR | 43 A, 800 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT8018L2VR | 43 A, 800 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT8015 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT8015JVFR | 功能描述:MOSFET N-CH 800V 44A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS V® 标准包装:10 系列:* |
| APT8015JVFR_05 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT8015JVR | 功能描述:MOSFET N-CH 800V 44A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS V® 标准包装:10 系列:* |
| APT8016DFN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 800V V(BR)DSS | 47A I(D) |
发布紧急采购，3分钟左右您将得到回复。