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参数资料
| 型号： | APT83GU30S |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 100 A, 300 V, N-CHANNEL IGBT |
| 封装： | D2PAK-3 |
| 文件页数： | 1/6页 |
| 文件大小： | 90K |
| 代理商： | APT83GU30S |
050-7465
Rev
A
2-2004
APT83GU30B
APT83GU30S
300V
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
Low Conduction Loss
SSOA rated
Low Gate Charge
Ultrafast Tail Current shutoff
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
STATIC ELECTRICAL CHARACTERISTICS
MIN
TYP
MAX
300
3
4.5
6
1.5
2.0
1.5
250
2500
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 250A)
Gate Threshold Voltage
(VCE = VGE, IC = 1mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 45A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 45A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
2
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
2
Gate-Emitter Leakage Current (VGE = ±20V)
Symbol
BVCES
VGE(TH)
VCE(ON)
ICES
IGES
UNIT
Volts
A
nA
Symbol
VCES
VGE
VGEM
IC1
IC2
ICM
SSOA
PD
TJ,TSTG
TL
APT83GU30B_S
300
±20
±30
100
83
295
295A @ 300V
543
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ 7 TC = 25°C
Continuous Collector Current @ TC = 100°C
Pulsed Collector Current 1
@ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
TO-247
G
C
E
G
C
E
POWER MOS 7
IGBT
D3PAK
G
C
E
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相关代理商/技术参数 |
参数描述 |
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| APT84F50B2 | 功能描述:MSOFET N-CH 500V 84A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 8™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT84F50L | 功能描述:MSOFET N-CH 500V 84A TO-264 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:POWER MOS 8™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT84M50B2 | 功能描述:MOSFET N-CH 500V 84A T-MAX RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT84M50B2_09 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:N-Channel MOSFET |
| APT84M50L | 功能描述:MOSFET N-CH 500V 84A TO-264 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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