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参数资料
| 型号： | APTC60DAM24CT1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 95 A, 600 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 251K |
| 代理商： | APTC60DAM24CT1G |
APTC60DAM24CT1G
APT
C
60DAM
24C
T
1G
–
Rev
0
J
anuar
y,
2008
www.microsemi.com
2 – 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 600V
Tj = 25°C
350
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V
Tj = 125°C
600
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 47.5A
24
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
200
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
14.4
Coss
Output Capacitance
VGS = 0V ; VDS = 25V
f = 1MHz
17
nF
Qg
Total gate Charge
300
Qgs
Gate – Source Charge
68
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 95A
102
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
100
Tf
Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 95A
RG = 2.5Ω
45
ns
Eon
Turn-on Switching Energy
810
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 10V ; VBus = 400V
ID = 95A ; RG = 2.5Ω
1040
J
Eon
Turn-on Switching Energy
1320
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 10V ; VBus = 400V
ID = 95A ; RG = 2.5Ω
1270
J
CR1 SiC diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
200
800
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 175°C
400
4000
A
IF
DC Forward Current
Tc = 100°C
40
A
Tj = 25°C
1.6
1.8
VF
Diode Forward Voltage
IF = 40A
Tj = 175°C
2.0
2.4
V
QC
Total Capacitive Charge
IF = 40A, VR = 300V
di/dt =1200A/s
56
nC
f = 1MHz, VR = 200V
260
C
Total Capacitance
f = 1MHz, VR = 400V
200
pF
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