参数资料
型号: APTC60DAM24CT1G
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 95 A, 600 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SP1, 12 PIN
文件页数: 6/7页
文件大小: 251K
代理商: APTC60DAM24CT1G
APTC60DAM24CT1G
APT
C
60DAM
24C
T
1G
Rev
0
J
anuar
y,
2008
www.microsemi.com
6 – 7
TJ=25°C
TJ=150°C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
I DR
,Reverse
Drai
n
Curren
t(A)
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
140
0
20 40 60 80 100 120 140 160
ID, Drain Current (A)
t d(
on)
a
nd
t
d(
of
f)
(ns)
VDS=400V
RG=2.5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
60
70
0
20
40
60
80 100 120 140 160
ID, Drain Current (A)
t r
and
t
f(n
s)
VDS=400V
RG=2.5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
0
20 40 60 80 100 120 140 160
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
erg
y
(
m
J)
VDS=400V
RG=2.5
TJ=125°C
L=100H
Eon
Eoff
0
1
2
3
4
5
0
5
10
15
20
25
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
erg
y
(
m
J)
Switching Energy vs Gate Resistance
VDS=400V
ID=95A
TJ=125°C
L=100H
hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
10 20 30 40 50 60 70 80 90
ID, Drain Current (A)
F
req
uen
cy
(kH
z
)
Operating Frequency vs Drain Current
VDS=400V
D=50%
RG=2.5
TJ=125°C
TC=75°C
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