参数资料
型号: APTC60DDAM45CT1G
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 49 A, 600 V, 0.045 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SP1, 12 PIN
文件页数: 1/7页
文件大小: 252K
代理商: APTC60DDAM45CT1G
APTC60DDAM45CT1G
APT
C
60DDAM
45CT
1G
Rev
0
M
ar
ch,
2009
www.microsemi.com
1 – 7
Pins 3/4 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
49
ID
Continuous Drain Current
Tc = 80°C
38
IDM
Pulsed Drain current
130
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
45
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
250
W
IAR
Avalanche current (repetitive and non repetitive)
15
A
EAR
Repetitive Avalanche Energy
3
EAS
Single Pulse Avalanche Energy
1900
mJ
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
-
Very rugged
SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Dual boost chopper
Super Junction MOSFET
Power Module
VDSS = 600V
RDSon = 45mΩ max @ Tj = 25°C
ID = 49A @ Tc = 25°C
相关PDF资料
PDF描述
APTC60DDAM70CT1G 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC60DDAM70T3 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC60DDAM70T3 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC60DSKM70CT1G 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC60HM35T3 72 A, 600 V, 0.035 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
APTC60DDAM45T1G 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V 49A SP1 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES
APTC60DDAM70CT1G 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 500V 39A SP1 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR
APTC60DDAM70T1G 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V SP1 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES
APTC60DDAM70T3 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual boost chopper Super Junction MOSFET Power Module
APTC60DDAM70T3G 功能描述:MOSFET MOD BOOST CHOPPER SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:*