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参数资料
| 型号： | APTC60DDAM70CT1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 251K |
| 代理商： | APTC60DDAM70CT1G |
APTC60DDAM70CT1G
APT
C
60DDAM
70CT
1G
–
Rev
0
Septem
ber
,2009
www.microsemi.com
1 – 7
Pins 3/4 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
39
ID
Continuous Drain Current
Tc = 80°C
29
IDM
Pulsed Drain current
160
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
70
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
250
W
IAR
Avalanche current (repetitive and non repetitive)
20
A
EAR
Repetitive Avalanche Energy
1
EAS
Single Pulse Avalanche Energy
1800
mJ
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
-
Very rugged
SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Dual boost chopper
Super Junction MOSFET
SiC chopper diode
VDSS = 600V
RDSon = 70mΩ max @ Tj = 25°C
ID = 39A @ Tc = 25°C
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PDF描述 |
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| APTC60DDAM70T3 | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC60DDAM70T3 | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC60DSKM70CT1G | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC60HM35T3 | 72 A, 600 V, 0.035 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTC60DDAM70T1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V SP1 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APTC60DDAM70T3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual boost chopper Super Junction MOSFET Power Module |
| APTC60DDAM70T3G | 功能描述:MOSFET MOD BOOST CHOPPER SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTC60DHM24T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V SP3 |
| APTC60DHM35T3G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Asymmetrical bridge Super Junction MOSFET Power Module |
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