- 您现在的位置：买卖IC网 > PDF目录36728 > APTC60DDAM70CT1G (MICROSEMI POWER PRODUCTS GROUP) 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APTC60DDAM70CT1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 251K |
| 代理商： | APTC60DDAM70CT1G |
APTC60DDAM70CT1G
APT
C
60DDAM
70CT
1G
–
Rev
0
Septem
ber
,2009
www.microsemi.com
2 – 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 600V
Tj = 25°C
25
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V
Tj = 125°C
250
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 39A
70
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.7mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
7
Coss
Output Capacitance
2.56
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.21
nF
Qg
Total gate Charge
259
Qgs
Gate – Source Charge
29
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 39A
111
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
283
Tf
Fall Time
Inductive Switching @ 125°C
VGS = 15V
VBus = 400V
ID = 39A
RG = 5Ω
84
ns
Eon
Turn-on Switching Energy
402
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 39A, RG = 5
980
J
Eon
Turn-on Switching Energy
657
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 39A, RG = 5
1206
J
Chopper SiC diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
100
400
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 175°C
200
2000
A
IF
DC Forward Current
Tc = 100°C
20
A
Tj = 25°C
1.6
1.8
VF
Diode Forward Voltage
IF = 20A
Tj = 175°C
2
2.4
V
QC
Total Capacitive Charge
IF = 20A, VR = 300V
di/dt =1800A/s
28
nC
f = 1MHz, VR = 200V
130
C
Total Capacitance
f = 1MHz, VR = 400V
100
pF
相关PDF资料 |
PDF描述 |
|---|---|
| APTC60DDAM70T3 | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC60DDAM70T3 | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC60DSKM70CT1G | 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC60HM35T3 | 72 A, 600 V, 0.035 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC60HM35T3 | 72 A, 600 V, 0.035 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTC60DDAM70T1G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V SP1 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES |
| APTC60DDAM70T3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual boost chopper Super Junction MOSFET Power Module |
| APTC60DDAM70T3G | 功能描述:MOSFET MOD BOOST CHOPPER SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTC60DHM24T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V SP3 |
| APTC60DHM35T3G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Asymmetrical bridge Super Junction MOSFET Power Module |
发布紧急采购，3分钟左右您将得到回复。