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参数资料
| 型号： | APTC60DDAM70T3 |
| 厂商： | Advanced Power Technology Ltd. |
| 英文描述： | Dual boost chopper Super Junction MOSFET Power Module |
| 中文描述： | 双升压斩波器超结MOSFET的功率模块 |
| 文件页数： | 4/6页 |
| 文件大小： | 346K |
| 代理商： | APTC60DDAM70T3 |
APTC60DDAM70T3
A
APT website – http://www.advancedpower.com
4 - 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4V
4.5V
5V
5.5V
6V
6.5V
0
40
80
120
160
200
0
5
10
15
20
25
V
DS
, Drain to Source Voltage (V)
I
D
,
V
GS
=15&10V
Low Voltage Output Characteristics
Transfert Characteristics
T
J
=-55°C
T
J
=25°C
T
J
=125°C
0
20
40
60
80
100
120
140
0
1
2
3
4
5
6
7
V
GS
, Gate to Source Voltage (V)
I
D
,
V
DS
> I
D
(on)xR
DS
(on)MAX
250μs pulse test @ < 0.5 duty cycle
R
DS
(on) vs Drain Current
V
GS
=10V
V
GS
=20V
0.9
0.95
1
1.05
1.1
0
10
20
30
40
50
60
I
D
, Drain Current (A)
R
D
(
Normalized to
V
GS
=10V @ 19.5A
0
5
10
15
20
25
30
35
40
45
25
50
75
100
125
150
T
C
, Case Temperature (°C)
I
D
,
DC Drain Current vs Case Temperature
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTC60DDAM70T3G | 功能描述:MOSFET MOD BOOST CHOPPER SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTC60DHM24T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V SP3 |
| APTC60DHM35T3G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Asymmetrical bridge Super Junction MOSFET Power Module |
| APTC60DHM45T1G | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Asymmetrical bridge Super Junction MOSFET Power Module |
| APTC60DSKM24T3G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V SP3 制造商:Microsemi Corporation 功能描述:600V 24mOhm Super Junction MOSFET Power Module |
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